Infocommunications and Radio Technologies Infocommunications and Radio Technologies ИНФОКОММУНИКАЦИОННЫЕ И РАДИОЭЛЕКТРОННЫЕ ТЕХНОЛОГИИ 2587-9936 52928 Электроника, фотоника, приборостроение и связь (2.2) ELECTRONICS, PHOTONICS, INSTRUMENTATION AND COMMUNICATIONS (2.2) Электроника, фотоника, приборостроение и связь (2.2) On some problems of modeling the processes of interaction of wide electron beams with planar microwave structures based on gallium nitride О некоторых проблемах моделирования процессов взаимодействия широких электронных пучков с планарными микроволновыми структурами на основе нитрида галлия Степович Михаил Адольфович Stepovich Mikhail A. m.stepovich@rambler.ru

доктор физико-математических наук;

doctor of physical and mathematical sciences;

 Калманович Вероника Валерьевна V Kalmanovich V V v572264@yandex.ru Филиппов Михаил Николаевич N Filippov M N fil@igic.ras.ru Калужский государственный университет им. Циолковского Калуга Россия Tsiolkovsky Kaluga State University Ka Russian Federation Калужский государственный университет им. Циолковского ru Tsiolkovsky Kaluga State University ru Институт общей и неорганической химии им. Курнакова РАН ru Kurnakov Institute of General and Inorganic Chemistry RAS ru 25 06 2021 25 06 2021 4 2 85 94 20 06 2021 https://rusjbpc.ru/en/nauka/article/52928/view

Рассмотрена проблема математического моделирования диффузии неравновесных неосновных носителей заряда, генерируемых киловольтными электронами, в полупроводниковых мишенях. Рассмотрены модели, позволяющие проводить расчеты в однородных мишенях и многослойных планарных полупроводниковых структурах. При проведении расчетов использовался матричный метод, позволяющий решать дифференциальные уравнения тепломассопереноса в многослойных планарных структурах с произвольным числом слоев. Приведены некоторые результаты математического моделирования процессов взаимодействия широких электронных пучков с планарными структурами для GaN и материалов подложки (SiC и Si).

The problem of mathematical modeling of the diffusion of nonequilibrium minority charge carriers generated by kilovolt electrons in semiconductor targets is considered. Models are considered that make it possible to perform calculations in homogeneous targets and multilayer planar semiconductor structures. In carrying out the calculations, the matrix method was used, which makes it possible to solve the differential equations of heat and mass transfer in multilayer planar structures with an arbitrary number of layers. Some results of mathematical modeling of the processes of interaction of wide electron beams with planar structures for GaN and substrate materials (SiC and Si) are presented.

 математическое моделирование полупроводники широкий электронный пучок неосновные носители заряда диффузия mathematical modeling semiconductors wide electron beam minority charge carrier diffusion This work was supported by the Russian Foundation for Basic Research (RFBR), project no. 19-03-00271, and by the RFBR and the Government of Kaluga Region, project no. 18-41-400001.

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