<!DOCTYPE article
PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.4 20190208//EN"
       "JATS-journalpublishing1.dtd">
<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" article-type="research-article" dtd-version="1.4" xml:lang="en">
 <front>
  <journal-meta>
   <journal-id journal-id-type="publisher-id">Russian Journal of Biological Physics and Chemisrty</journal-id>
   <journal-title-group>
    <journal-title xml:lang="en">Russian Journal of Biological Physics and Chemisrty</journal-title>
    <trans-title-group xml:lang="ru">
     <trans-title>АКТУАЛЬНЫЕ ВОПРОСЫ БИОЛОГИЧЕСКОЙ ФИЗИКИ И ХИМИИ</trans-title>
    </trans-title-group>
   </journal-title-group>
   <issn publication-format="print">2499-9962</issn>
  </journal-meta>
  <article-meta>
   <article-id pub-id-type="publisher-id">54696</article-id>
   <article-categories>
    <subj-group subj-group-type="toc-heading" xml:lang="ru">
     <subject>Моделирование в биофизике</subject>
    </subj-group>
    <subj-group subj-group-type="toc-heading" xml:lang="en">
     <subject>Modelling in biophycis</subject>
    </subj-group>
    <subj-group>
     <subject>Моделирование в биофизике</subject>
    </subj-group>
   </article-categories>
   <title-group>
    <article-title xml:lang="en">Electric transport properties of single-layer germanene in the semiclassical approximation</article-title>
    <trans-title-group xml:lang="ru">
     <trans-title>Электротранспортные свойства однослойного германена в квазиклассическом приближении</trans-title>
    </trans-title-group>
   </title-group>
   <contrib-group content-type="authors">
    <contrib contrib-type="author">
     <name-alternatives>
      <name xml:lang="ru">
       <surname>Судоргин</surname>
       <given-names>С А</given-names>
      </name>
      <name xml:lang="en">
       <surname>Sudorgin</surname>
       <given-names>S A</given-names>
      </name>
     </name-alternatives>
     <email>sergsud@mail.ru</email>
     <xref ref-type="aff" rid="aff-1"/>
    </contrib>
   </contrib-group>
   <aff-alternatives id="aff-1">
    <aff>
     <institution xml:lang="ru">Волгоградский государственный аграрный университет</institution>
     <country>ru</country>
    </aff>
    <aff>
     <institution xml:lang="en">Volgograd State Agricultural University</institution>
     <country>ru</country>
    </aff>
   </aff-alternatives>
   <pub-date publication-format="print" date-type="pub" iso-8601-date="2021-12-25T20:22:29+03:00">
    <day>25</day>
    <month>12</month>
    <year>2021</year>
   </pub-date>
   <pub-date publication-format="electronic" date-type="pub" iso-8601-date="2021-12-25T20:22:29+03:00">
    <day>25</day>
    <month>12</month>
    <year>2021</year>
   </pub-date>
   <volume>6</volume>
   <issue>4</issue>
   <fpage>586</fpage>
   <lpage>590</lpage>
   <history>
    <date date-type="received" iso-8601-date="2021-12-20T20:22:29+03:00">
     <day>20</day>
     <month>12</month>
     <year>2021</year>
    </date>
    <date date-type="accepted" iso-8601-date="2021-12-20T20:22:29+03:00">
     <day>20</day>
     <month>12</month>
     <year>2021</year>
    </date>
   </history>
   <self-uri xlink:href="https://rusjbpc.ru/en/nauka/article/54696/view">https://rusjbpc.ru/en/nauka/article/54696/view</self-uri>
   <abstract xml:lang="ru">
    <p>В работе выполнено исследование электротранспортных характеристик однослойного германена во внешнем постоянном электрическом поле. Малая запрещенная щель германена поддается управлению электрическим полем, адсорбцией различных атомов, деформацией и взаимодействием с подложкой. Используя метод квазиклассического приближения получено аналитическое соотношение для удельной проводимости однослойного германена. Эволюция электронной системы германеновых листов описывалась с помощью кинетического уравнения Больцмана в рамках квазиклассического приближения времени релаксации. В качестве геометрической модели германеновой наноленты выбирался двумерный гексагональный слой. Математическая модель электронного строения недеформированных германеновых нанолент строится на основе их геометрического строения и зонной структуры гексагонального слоя. Используется зонная структура нанолент в рамках метода сильной связи в приближениях Хюккеля и ближайших соседей. Исследованы зависимости удельной проводимости германеновых слоев различной хиральности от величины напряженности внешнего электрического поля.</p>
   </abstract>
   <trans-abstract xml:lang="en">
    <p>This article is devoted to the study of electrical transport characteristics of single-layer germanene in an external constant electric field. The small forbidden gap of germanene can be controlled by the electric field, adsorption of various atoms, deformation, and interaction with the substrate. Using the method of the semiclassical approximation, an analytical relation is obtained for the specific conductivity of single-layer germanene. The evolution of the electron system of germanene sheets was described using the kinetic Boltzmann equation in the framework of the semiclassical relaxation time approximation. A two-dimensional hexagonal layer was chosen as a geometric model of a germanene nanoribbon. The mathematical model of the electronic structure of undeformed germanene nanoribbons is based on their geometric structure and the band structure of the hexagonal layer. The band structure of nanoribbons is used within the framework of the tight binding method in the Hückel and nearest neighbors approximations. The dependences of the specific conductivity of germanene layers of different chirality on the strength of the external electric field are investigated.</p>
   </trans-abstract>
   <kwd-group xml:lang="ru">
    <kwd>германен</kwd>
    <kwd>электронный транспорт</kwd>
    <kwd>электропроводность</kwd>
    <kwd>наноструктуры</kwd>
    <kwd>квазиклассическое приближение</kwd>
   </kwd-group>
   <kwd-group xml:lang="en">
    <kwd>germanene</kwd>
    <kwd>electron transport</kwd>
    <kwd>electrical conductivity</kwd>
    <kwd>nanostructures</kwd>
    <kwd>semiclassical approximation</kwd>
   </kwd-group>
   <funding-group>
    <funding-statement xml:lang="ru">Исследование выполнено при финансовой поддержке РФФИ и Волгоградской области в рамках научного проекта № 19-42-343001.</funding-statement>
   </funding-group>
  </article-meta>
 </front>
 <body>
  <p></p>
 </body>
 <back>
  <ref-list>
   <ref id="B1">
    <label>1.</label>
    <citation-alternatives>
     <mixed-citation xml:lang="ru">
            
              Лозовик Ю.Е., Меркулова С.П., Соколик А.А. Коллективные электронные явления в графене. Успехи физических наук, 2008, т. 178, № 7, с. 758-776.  @@Lozovik Yu.E., Merkulova S.P., Sokolik A.A., Collective electron phenomena in graphene. Phys. Usp., 2008, vol. 51, no. 7, 727-744. (In Russ.)
            
          </mixed-citation>
     <mixed-citation xml:lang="en">
            
              Lozovik Yu.E., Merkulova S.P., Sokolik A.A. Kollektivnye elektronnye yavleniya v grafene. Uspehi fizicheskih nauk, 2008, t. 178, № 7, s. 758-776.  @@Lozovik Yu.E., Merkulova S.P., Sokolik A.A., Collective electron phenomena in graphene. Phys. Usp., 2008, vol. 51, no. 7, 727-744. (In Russ.)
            
          </mixed-citation>
    </citation-alternatives>
   </ref>
   <ref id="B2">
    <label>2.</label>
    <citation-alternatives>
     <mixed-citation xml:lang="ru">
            
              Чернозатонский Л.А., Сорокин П.Б., Артюх А.А. Новые наноструктуры на основе графена: физико-химические свойства и приложения. Успехи химии, 2014, т. 83, вып. 3, c. 251-279.  @@Chernozatonskii L.A., Sorokin P.B., Artukh A.A. New nanostructures based on graphene: physical and chemical properties and applications. Russ. Chem. Rev., 2014, vol. 83, pp. 251-279. (In Russ.)
            
          </mixed-citation>
     <mixed-citation xml:lang="en">
            
              Chernozatonskiy L.A., Sorokin P.B., Artyuh A.A. Novye nanostruktury na osnove grafena: fiziko-himicheskie svoystva i prilozheniya. Uspehi himii, 2014, t. 83, vyp. 3, c. 251-279.  @@Chernozatonskii L.A., Sorokin P.B., Artukh A.A. New nanostructures based on graphene: physical and chemical properties and applications. Russ. Chem. Rev., 2014, vol. 83, pp. 251-279. (In Russ.)
            
          </mixed-citation>
    </citation-alternatives>
   </ref>
   <ref id="B3">
    <label>3.</label>
    <citation-alternatives>
     <mixed-citation xml:lang="ru">
            
              Lemme M.C. Current status of graphene transistors. Solid State Phenomena, 2009, vol. 156, pp. 499.
            
          </mixed-citation>
     <mixed-citation xml:lang="en">
            
              Lemme M.C. Current status of graphene transistors. Solid State Phenomena, 2009, vol. 156, pp. 499.
            
          </mixed-citation>
    </citation-alternatives>
   </ref>
   <ref id="B4">
    <label>4.</label>
    <citation-alternatives>
     <mixed-citation xml:lang="ru">
            
              Davila M.E, Xian L., Cahangirov S., Rubio A., Le Lay G. Germanene: a novel two-dimensional germanium allotrope akin to graphene and silicene. New Journal of Physics, 2014, vol. 16, no. 9 p. 095002. doi: 10.1088/1367-2630/16/9/095002
            
          </mixed-citation>
     <mixed-citation xml:lang="en">
            
              Davila M.E, Xian L., Cahangirov S., Rubio A., Le Lay G. Germanene: a novel two-dimensional germanium allotrope akin to graphene and silicene. New Journal of Physics, 2014, vol. 16, no. 9 p. 095002. doi: 10.1088/1367-2630/16/9/095002
            
          </mixed-citation>
    </citation-alternatives>
   </ref>
   <ref id="B5">
    <label>5.</label>
    <citation-alternatives>
     <mixed-citation xml:lang="ru">
            
              Kyozaburo T., Kenji S. Theoretical possibility of stage corrugation in Si and Ge analogs of graphite. Physical Review B, 1994, vol. 50, no. 20, pp. 14916-14922. DOI: 10.1103/PhysRevB.50.14916
            
          </mixed-citation>
     <mixed-citation xml:lang="en">
            
              Kyozaburo T., Kenji S. Theoretical possibility of stage corrugation in Si and Ge analogs of graphite. Physical Review B, 1994, vol. 50, no. 20, pp. 14916-14922. DOI: 10.1103/PhysRevB.50.14916
            
          </mixed-citation>
    </citation-alternatives>
   </ref>
   <ref id="B6">
    <label>6.</label>
    <citation-alternatives>
     <mixed-citation xml:lang="ru">
            
              Cahangirov S., Topsakal M., Aktürk E., Şahin H., Ciraci S. Two- and one-dimensional honeycomb structures of silicon and germanium. Physical Review Letters, 2009, vol. 102, no. 23, p. 236804. doi: 10.1103/PhysRevLett.102.236804
            
          </mixed-citation>
     <mixed-citation xml:lang="en">
            
              Cahangirov S., Topsakal M., Aktürk E., Şahin H., Ciraci S. Two- and one-dimensional honeycomb structures of silicon and germanium. Physical Review Letters, 2009, vol. 102, no. 23, p. 236804. doi: 10.1103/PhysRevLett.102.236804
            
          </mixed-citation>
    </citation-alternatives>
   </ref>
   <ref id="B7">
    <label>7.</label>
    <citation-alternatives>
     <mixed-citation xml:lang="ru">
            
              Lebe`gue S., Bjoerkman T., Klintenberg M., Nieminen R.M., Eriksson O. Two-Dimensional Materials from Data Filtering and Ab Initio Calculations. Physical Review X, 2013, vol. 3, p. 031002.
            
          </mixed-citation>
     <mixed-citation xml:lang="en">
            
              Lebe`gue S., Bjoerkman T., Klintenberg M., Nieminen R.M., Eriksson O. Two-Dimensional Materials from Data Filtering and Ab Initio Calculations. Physical Review X, 2013, vol. 3, p. 031002.
            
          </mixed-citation>
    </citation-alternatives>
   </ref>
   <ref id="B8">
    <label>8.</label>
    <citation-alternatives>
     <mixed-citation xml:lang="ru">
            
              Mortazavi B., Rahaman O., Makaremi M., Dianat A., Cunibertic G., Rabczuk T. First-principles investigation of mechanical properties of silicene, germanene and stanine. Physica E, 2017, vol. 87, pp. 228-232.
            
          </mixed-citation>
     <mixed-citation xml:lang="en">
            
              Mortazavi B., Rahaman O., Makaremi M., Dianat A., Cunibertic G., Rabczuk T. First-principles investigation of mechanical properties of silicene, germanene and stanine. Physica E, 2017, vol. 87, pp. 228-232.
            
          </mixed-citation>
    </citation-alternatives>
   </ref>
   <ref id="B9">
    <label>9.</label>
    <citation-alternatives>
     <mixed-citation xml:lang="ru">
            
              Kazemlou V. Phirouznia A. Influence of compression strains on photon absorption of silicene and germanene. Superlattices and Microstructures, 2019, vol. 128, pp. 23-29.
            
          </mixed-citation>
     <mixed-citation xml:lang="en">
            
              Kazemlou V. Phirouznia A. Influence of compression strains on photon absorption of silicene and germanene. Superlattices and Microstructures, 2019, vol. 128, pp. 23-29.
            
          </mixed-citation>
    </citation-alternatives>
   </ref>
   <ref id="B10">
    <label>10.</label>
    <citation-alternatives>
     <mixed-citation xml:lang="ru">
            
              Ландау Л.Д., Лифшиц Е.М. Физическая кинетика. Физ.-мат. лит., 1979, 528 c.  @@Landau L.D., Lifshits E.M. Physical kinetics. Phys.-mat. lit., 1979, 528 p. (In Russ.)
            
          </mixed-citation>
     <mixed-citation xml:lang="en">
            
              Landau L.D., Lifshic E.M. Fizicheskaya kinetika. Fiz.-mat. lit., 1979, 528 c.  @@Landau L.D., Lifshits E.M. Physical kinetics. Phys.-mat. lit., 1979, 528 p. (In Russ.)
            
          </mixed-citation>
    </citation-alternatives>
   </ref>
   <ref id="B11">
    <label>11.</label>
    <citation-alternatives>
     <mixed-citation xml:lang="ru">
            
              Дыкман И.М., Томчук П.М. Явления переноса и флуктуации в полупроводниках. Наук. думка, Киев, 1981, 320 c.  @@Dykman I.M., Tomchuk P.M. Transport phenomena and fluctuations in semiconductors. Science. dumka, Kiev, 1981, 320 p. (In Russ.)
            
          </mixed-citation>
     <mixed-citation xml:lang="en">
            
              Dykman I.M., Tomchuk P.M. Yavleniya perenosa i fluktuacii v poluprovodnikah. Nauk. dumka, Kiev, 1981, 320 c.  @@Dykman I.M., Tomchuk P.M. Transport phenomena and fluctuations in semiconductors. Science. dumka, Kiev, 1981, 320 p. (In Russ.)
            
          </mixed-citation>
    </citation-alternatives>
   </ref>
  </ref-list>
 </back>
</article>
