%0 Journal Article
%T Radiation-Hardening-By-Design of the HighPerformance CMOS Nanometer System-on-chip
%A Gerasimov, Y.M.
%A Grigoryev, N..
%A Kobylyatskiy, A..
%A Petrichkovich, Y.Y.
%A Solokhina, T..
%K », CMOS transistors, system-on-chip, radiation hardness, radiationhardening-by-design, standard cell library, IP-block, single event effects, latch-up
%J Infocommunications and Radio Technologies
%D 2019
%N 2
%P 18
%I Federal State Educational Institution of Higher Education Sevastopol State University