%0 Journal Article
%T Size effects in the processes of large ion implantation into n-GaAs(100) epitaxial layers
%A Torkhov, N..
%A Krivchuk, A..
%K implantation, large ions, size effect, gallium arsenide, heteroepitaxial structures
%J Infocommunications and Radio Technologies
%D 2019
%N 2
%P 10
%I Federal State Educational Institution of Higher Education Sevastopol State University