@article{Lovshenko2019physic-topological,
author={Lovshenko, I.. and Stempitsky, V.. and Shandarovich, V..},
title={Physic-topological model of a field effect transistor, taking into account the degradation of operational characteristics under the influence of ionizing radiation},
journal={Infocommunications and Radio Technologies},
publisher={Federal State Educational Institution of Higher Education Sevastopol State University},
year={2019},
pages={466-475},
volume={2},
issue={4},
}