%0 Journal Article
%T Physic-topological model of a field effect transistor, taking into account the degradation of operational characteristics under the influence of ionizing radiation
%A Lovshenko, I..
%A Stempitsky, V..
%A Shandarovich, V..
%K SRAM, hardness, ionizing radiation, process and device simulation, CAD, SPICE, model, field-effect transistor, current mirror
%J Infocommunications and Radio Technologies
%D 2019
%N 2
%P 9
%I Federal State Educational Institution of Higher Education Sevastopol State University