TY  JOUR
TI  Physic-topological model of a field effect transistor, taking into account the degradation of operational characteristics under the influence of ionizing radiation
KW  SRAM
KW  hardness
KW  ionizing radiation
KW  process and device simulation
KW  CAD
KW  SPICE
KW  model
KW  field-effect transistor
KW  current mirror
JO  Infocommunications and Radio Technologies
AU  Lovshenko, I..
AU  Stempitsky, V..
AU  Shandarovich, V..
PY  2019
IS  2
PB  Federal State Educational Institution of Higher Education Sevastopol State University