LDR 00919naa#a2200205#i#450#
001     EN\\bibl\52886
005     20241109120744.6
011 ## _a2587-9936
100 ## _a20191225b2019####ek#y0engy0150####ca
101 0# _aRUS
102 ## _aRU
200 1# _aPhysic-topological model of a field effect transistor, taking into account the degradation of operational characteristics under the influence of ionizing radiation
       _eJournal article
210 1# _aSevastopol
       _cFederal State Educational Institution of Higher Education Sevastopol State University
       _d2019
215 ## _a9 с.
608 ## _aJournal article
       _2local
675 ## _aЭлектронные элементы, использующие свойства твердого тела. Полупроводниковая электроника. 621.382
       _zRUS
700 #1 _aLovshenko
       _gIvan Yu 
700 #1 _aStempitsky
       _gVictor R 
700 #1 _aShandarovich
       _gVeronika T 
856 4# _arusjbpc.ru
       _u