00919naa#a2200205#i#4500001001500000005001700015011001400032100004100046101000800087102000700095200018500102210010800287215001000395608002700405675018600432700002400618700002600642700003000668856001500698EN\\bibl\5288620250201025202.6##a2587-9936##a20191225b2019####ek#y0engy0150####ca0#aRUS##aRU1#aPhysic-topological model of a field effect transistor, taking into account the degradation of operational characteristics under the influence of ionizing radiationeJournal article1#aSevastopolcFederal State Educational Institution of Higher Education Sevastopol State Universityd2019##a9 с.##aJournal article2local##aЭлектронные элементы, использующие свойства твердого тела. Полупроводниковая электроника. 621.382zRUS#1aLovshenkogIvan Yu #1aStempitskygVictor R #1aShandarovichgVeronika T 4#arusjbpc.ru