00919naa#a2200205#i#450# EN\\bibl\52886 20241109120642.6 2587-9936 20191225b2019####ek#y0engy0150####ca RUS RU Physic-topological model of a field effect transistor, taking into account the degradation of operational characteristics under the influence of ionizing radiation Journal article Sevastopol Federal State Educational Institution of Higher Education Sevastopol State University 2019 9 с. Journal article local Электронные элементы, использующие свойства твердого тела. Полупроводниковая электроника. 621.382 RUS Lovshenko Ivan Yu Stempitsky Victor R Shandarovich Veronika T rusjbpc.ru