UDC 621.383

INTEGRATED OPTICAL WAVEGUIDES BASED ON SI3N4 FILMS INTEGRATED OPTICAL WAVEGUIDES BASED ON Si3N4 FILMS

Published in Infocommunications and Radio Technologies · Volume 5, Issue 3 · Pages 318–324 · Rubric: ELECTRONICS, PHOTONICS, INSTRUMENTATION AND COMMUNICATIONS (2.2)
DOI: https://doi.org/10.29039/2587-9936.2022.05.3.23
Received: 20.09.2022 Accepted: 20.09.2022 Published: 28.09.2022
The paper presents studies at developing a technology for the formation of a rib integrated optical waveguide based on a Si3N4 film. The effect of ICP deposition modes on the structure of SiO2 and Si3N4 films and the effects of RIE etching of the waveguide on the rib profile and surface roughness are studied.
PIC, phase grating, silicon nitride on insulator.
Funding
Development of technological modes of etching of optical waveguides was carried out at the expense of the Russian Science Foundation grant No. 21-79-10077. Calculations of the geometrical dimensions of optical waveguides were carried out in the framework of the GR NIOKTR No. AAAA-A19-119110690036-9
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