HIGH-SPEED SWITCHING DIODES
Rubrics: ELECTRONICS (05.27.00)
Authors:
1.
Scientific & Research Institute of Semiconductor Devices
2.
Scientific & Research Institute of Semiconductor Devices
Type:
Article
Pages:
from 411
to 415
Status:
Published
Received:
20.09.2019
Accepted:
25.09.2019
Published:
25.09.2019
Subject area:
UDK 621.382.2 Полупроводниковые (кристаллические) диоды
Language:
Russian
Keywords:
high-speed diodes, p-n junction, reverse recovery time
Abstract (English):
The results of studies of the effect gold-to-silicon diffusion for the electrical parameters of silicon high-speed switching diodes are presented.
The results of studies of the effect gold-to-silicon diffusion for the electrical parameters of silicon high-speed switching diodes are presented.
Keywords:
high-speed diodes, p-n junction, reverse recovery time
high-speed diodes, p-n junction, reverse recovery time
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