Moscow, Russian Federation
Moscow, Moscow, Russian Federation
UDK 621.382.3 Полупроводниковые триоды (транзисторы)
UDK 004.333 Постоянная память
The design and calculations of basic characteristics of memory cell based on crossed nanowires with different cross-sections are presented. The device operation is possible if the transverse dimensions of the nanowires provide dimensional quantization of the electron energy in the working temperature values. In this case, the intersecting regions of nanowires with different cross-sections are the quantum wells for electrons. Tunneling of electrons between quantum wells controlled by applied voltage provides information recording. The write rate of cell can reach Pbytes/s =〖10〗^15 bytes/s.
memory, nanowire, dimensional quantization, semiconductor, quantum device
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