from 01.01.2021 until now
Scientific-Research Institute of Semiconductor Devices; Tomsk State University; State University of Control Systems and Radioelectronics
Sevastopol, Sevastopol, Russian Federation
Sevastopol, Sevastopol, Russian Federation
Sevastopol, Sevastopol, Russian Federation
Sevastopol, Sevastopol, Russian Federation
UDK 621.382.3 Полупроводниковые триоды (транзисторы)
Optimization of the structure of a planar Schottky diode with a whisker and an air anode lead allowed to obtain 198 GHz bandwidth (fractional bandwidth of 16.5 %) at a central frequency of ~1200 GHz and reduce insertion losses of 3.4 dB at a noise temperature of ~3300 K.
planar Schottky diode, compact model, THz-range, small-signal S-parameters
1. N. A. Torkhov, L. I. Babak, A. A. Kokolov, “On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges,” Semiconductors, vol. 53, no. 12, pp. 1688-1698, 2019, doi:https://doi.org/10.1134/S1063782619160280.; ; EDN: https://elibrary.ru/FECDYQ
2. N. A. Torkhov, “Method of manufacturing diode with terahertz range whisker,” RF patent no. 2635853, Nov. 16, 2017.
3. N. A. Torkhov, “Compact terahertz whisker diode,” RF patent no. 176768, Jan. 19, 2018.
4. I. Mehdi, J. V. Siles, C. Lee, and E. Schlecht, “THz Diode Technology: Status, Prospects, and Applications,” Proceedings of the IEEE, vol. 105, no. 6, pp. 990-1007, Jun. 2017, doi: https://doi.org/10.1109/jproc.2017.2650235.
5. P. R. Wilkinson, “Development of 664 GHz Sub-harmonic Mixers,” Ph.D. dissertation, Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, 2014.
