The results of applying the procedure for extracting parameters models of MOS transistor and a field effect transistor with a p-n-junction, taking into account the effect of radiation, are presented. It is shown that taking into account only a part of the parameters with the highest sensitivity to radiation, allowed to reducing the time of extraction and simplify the mathematical expressions used to calculate the parameters.
hardness, ionizing radiation, instrumentation modeling, CAD, SPICE, model, extraction
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