The adhesion of Saccharomyces cerevisiae microorganisms to silicon carbide nanofilms on silicon (SiC / Si) has been investigated. It is shown that for the yeast cells the adhesion coefficient reaches 0.96. Thin nanolayers, with a thickness of about 100 nm, silicon carbide SiC on a silicon substrate, represent a heterostructure, on the surface of which a strong electric charge arises. This makes the SiC / Si film a unique surface for studying the adhesion processes of various microorganisms.
SiC/Si, adhesion, microorganisms, cell, nanofilms of SiC/Si
1. Zvyagincev D.G. Vzaimodeystvie mikroorganizmov s tverdymi poverhnostyami. M.: Izd. MGU, 1973, 175 s. [Kaznacheev I.V., Gumargalieva K.Z., et al. Adhesion of various microscopic fungi to hydrophobic and hydrophilic materials. Microbiologicheskii zhurnal,. 1988, vol. 50, no. 6, pp. 68-70 (In Russ.)]
2. Kaznacheev I.V., Gumargalieva K.Z., Mironova S.N., Moiseev Yu.V. Adgeziya razlichnyh mikroskopicheskih gribov k gidrofobnym i gidrofil'nym materialam. Mikrobiologicheskiy zhurnal, 1988, t. 50, № 6, s. 68-70. [Gorbushina A.A., Panina L.K. Adhesion of conidia of micromycetes to polymeric materials. Mycologia I phytopatologia, 1992, vol. 26, iss. 5, pp. 372-377 (In Russ.)]
3. Gorbushina A.A., Panina L.K. Adgeziya konidiy mikromicetov k polimernym materialam. Mikologiya i fitopat., 1992, t. 26, vyp. 5, s. 372-377. [Kukushkin S.A., Osipov A.V., Feoktistov N.A. Synthesis of epitaxial silicon carbide films by substitution of atoms in the silicon lattice. FTT, 2014, vol. 56, iss. 8, pp. 1457-1485 (In Russ.)]
4. Kukushkin S.A., Osipov A.V., Feoktistov N.A. Sintez epitaksial'nyh plenok karbida kremniya metodom zamescheniya atomov v kristallicheskoy reshetke kremniya. FTT. 2014, t. 56, vyp. 8, s. 1457-1485. [Kukushkin S.A., Osipov A.V., Feoktistov N.A. Synthesis of epitaxial silicon carbide films by substitution of atoms in the silicon lattice. FTT. 2014, vol. 56, iss. 8, pp. 1457-1485 (In Russ.)]
5. Kukushkin S.A., Osipov A.V. Topical Review. Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films. J. of Phys. D: Appl. Phys., 2014, vol. 47, pp. 313001-313041. [Kukushkin S.A., Osipov A.V. Topical Review. Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films. J. of Phys. D: Appl. Phys.,2014, vol. 47, pp. 313001-313041 (In Russ.)]
6. Graschenko A.S., Feoktistov N.A., Osipov A.V., Kalinina E.V., Kukushkin S.A. Fotoelektricheskie harakteristiki struktur karbid kremniya-kremniy, vyraschennyh metodom zamescheniya atomov v kristallicheskoy reshetke kremniya. Fizika i tehnika poluprovodnikov. 2017, t. 51, vyp. 5, s. 611-627.
7. Kukushkin S.A., Osipov A.V. Effekt Gorskogo pri sinteze plenok karbida kremniya iz kremniya metodom topohimicheskogo zamescheniya atomov. Pis'ma v zhurnal tehnicheskoy fiziki, 2017, t. 43, vyp. 13, s. 81-88. [Kukushkin S.A., Osipov A.V. The Gorsky Effect in the Synthesis of Silicon-Carbide Films from Silicon by Topochemical Substitution of Atoms. Technical Physics Letters, 2017, vol. 43, no. 7, pp. 81-88 (In Russ.)]
8. Benemanskaya G.V., Dement'ev P.A., Kukushkin S.A., Lapushkin M.N., Osipov A.V., Timoshnev S.N. Fotoemissionnye issledovaniya vicinal'noy poverhnosti SiC(100) 4◦ i interfeysa Cs/SiC(100) 4°. Pis'ma v ZhTF. 2016, t. 42, vyp. 23, s. 51-57. [Benemanskaya G.V., Dementev P.A., Kukushkin S.A., Lapushkin M.N., Osipov A.V., Timoshnev S.N. Photoemission Studies of the Vicinal SiC (100) 40 Surface and the Cs/SiC/(100) 4° Interface. Technical Physical Letters, 2016, vol. 42, iss. 23, pp. 51-57 (In Russ.)]
