Kaluga, Kaluga, Russian Federation
The problem of mathematical modeling of the diffusion of nonequilibrium minority charge carriers generated by kilovolt electrons in semiconductor targets is considered. Models are considered that make it possible to perform calculations in homogeneous targets and multilayer planar semiconductor structures. In carrying out the calculations, the matrix method was used, which makes it possible to solve the differential equations of heat and mass transfer in multilayer planar structures with an arbitrary number of layers. Some results of mathematical modeling of the processes of interaction of wide electron beams with planar structures for GaN and substrate materials (SiC and Si) are presented.
mathematical modeling, semiconductors, wide electron beam, minority charge carrier, diffusion
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