The method for determining the metrological characteristics of the probe system for the scattering parameter measurements of passive and active devices on a semiconductor substrate is presented. The main idea is to estimate the residual errors and determine the accuracy of the obtained estimates. The implementation of the idea is based on a special filtration technology by the processing of verification measurements and unscented transformation for the study of the quality of a verification set which consists of a single transmission line that can be made on a substrate with devices.
vector network analyzer, probe station, on-wafer measurements, transmission line, verification, residual errors, unscented transformation
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