The results of the application compact MOSFET model developed and integrated into the Cadence software product for assessing hardness of the circuit of current mirror and 6T SRAM with the read / write control circuit when combined or separately exposed to x-ray and nuclide 60Co ionizing radiation sources are presented.
SRAM, hardness, ionizing radiation, process and device simulation, CAD, SPICE, model, field-effect transistor, current mirror
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