The paper investigates in local approximation the influence of the processes of Cl++ ion implantation into gallium arsenide GaAs{100} epitaxial layers on fractal dimensions Df of functional spaces S (RSH) of n-GaAs epitaxial layer sheet resistances RSH and functional spaces S( rc ) of alloyed ohmic contact specific resistances rc. It is found out that the internal geometry of the studied objects is changed under the action of irradiation.
implantation, large ions, size effect, gallium arsenide, heteroepitaxial structures
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